Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopy

The effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si1-x-yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The dependence of the Raman intensities of the carbon local modes and the Si-Si modes versus carbon content was analysed. A linear dependence has been revealed for the integrated and peak intensities of these vibrational modes versus C content for samples with x ≤16%. This shows that Raman scattering measurements can be utilised for determination of the substitutional carbon content in SiGeC layers with a Ge content up to 16%.